150 GHz Complementary Anti-Parallel Diode Frequency Tripler in 130 nm CMOS

The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ~34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ~10 GHz.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE microwave and wireless components letters 2011-01, Vol.21 (1), p.43-45
Hauptverfasser:	Dongha Shim, Chuying Mao, Sankaran, Swaminathan, Kenneth, K O
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties CMOS CMOS integrated circuits complementary anti-parallel diode pair Conversion Design. Technologies. Operation analysis. Testing Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency measurement Frequency ranges frequency tripler Harmonic analysis Integrated circuits Loss measurement Microwaves Noise levels Power generation Schottky barrier diode Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors sub-terahertz Transmission line measurements
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Beschreibung
Zusammenfassung:	The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ~34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ~10 GHz.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2010.2087321