Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs

Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs

We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. Th...

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Hauptverfasser: Kunihiro, K., Nogome, M., Ohno, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrodes
Electrostatics
FETs
Frequency measurement
Gallium arsenide
Impedance measurement
Laboratories
MESFETs
National electric code
Parasitic capacitance
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Beschreibung
Zusammenfassung:We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1996.567846