Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers
Two algorithms for distributed open-short (OS) and open-short-load de-embedding of multiport on-wafer S -parameter measurements are presented, and used for the characterization of four-port differential amplifiers operating in the 60-GHz band. For both methods, comparison to industry standard OS de-...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2011-03, Vol.59 (3), p.763-771 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Tiemeijer, Luuk F Pijper, Ralf M T van der Heijden, Edwin |
| description | Two algorithms for distributed open-short (OS) and open-short-load de-embedding of multiport on-wafer S -parameter measurements are presented, and used for the characterization of four-port differential amplifiers operating in the 60-GHz band. For both methods, comparison to industry standard OS de-embedding shows that anomalies in extracted test-structure parasitics are now avoided, which in particular improves the characterization of the differential input and output impedances. |
| doi_str_mv | 10.1109/TMTT.2010.2095879 |
| format | Article |
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For both methods, comparison to industry standard OS de-embedding shows that anomalies in extracted test-structure parasitics are now avoided, which in particular improves the characterization of the differential input and output impedances.</description><subject>45-nm node CMOS</subject><subject>Algorithms</subject><subject>Amplifiers</subject><subject>Anomalies</subject><subject>Applied sciences</subject><subject>Approximation methods</subject><subject>Calibration</subject><subject>Capacitance</subject><subject>Circuit properties</subject><subject>Crosstalk</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Differential amplifiers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Impedance</subject><subject>Inductance</subject><subject>Industry standards</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>multiport open-short-load (OSL) de-embedding</subject><subject>on-wafer microwave measurements</subject><subject>Operating systems</subject><subject>Resistance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 2011-03, Vol.59 (3), p.763-771 |
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| source | IEEE Electronic Library (IEL) |
| subjects | 45-nm node CMOS Algorithms Amplifiers Anomalies Applied sciences Approximation methods Calibration Capacitance Circuit properties Crosstalk Design. Technologies. Operation analysis. Testing Differential amplifiers Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Impedance Inductance Industry standards Integrated circuit interconnections Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves multiport open-short-load (OSL) de-embedding on-wafer microwave measurements Operating systems Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability |
| title | Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers |
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