Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers

Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers

Two algorithms for distributed open-short (OS) and open-short-load de-embedding of multiport on-wafer S -parameter measurements are presented, and used for the characterization of four-port differential amplifiers operating in the 60-GHz band. For both methods, comparison to industry standard OS de-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on microwave theory and techniques 2011-03, Vol.59 (3), p.763-771
Hauptverfasser: Tiemeijer, Luuk F, Pijper, Ralf M T, van der Heijden, Edwin
Format: Artikel
Sprache:eng
Schlagworte:
45-nm node CMOS
Algorithms
Amplifiers
Anomalies
Applied sciences
Approximation methods
Calibration
Capacitance
Circuit properties
Crosstalk
Design. Technologies. Operation analysis. Testing
Differential amplifiers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Impedance
Inductance
Industry standards
Integrated circuit interconnections
Integrated circuits
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
multiport open-short-load (OSL) de-embedding
on-wafer microwave measurements
Operating systems
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing, measurement, noise and reliability
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Two algorithms for distributed open-short (OS) and open-short-load de-embedding of multiport on-wafer S -parameter measurements are presented, and used for the characterization of four-port differential amplifiers operating in the 60-GHz band. For both methods, comparison to industry standard OS de-embedding shows that anomalies in extracted test-structure parasitics are now avoided, which in particular improves the characterization of the differential input and output impedances.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2010.2095879