The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells

For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al...

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Hauptverfasser: Hung-Jen Yang, Chien-Liang Wu, Chian-Fu Huang, Chun-Heng Chen, Yi-Chan Chen, Wen-Cheng Lee
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al and device, we establish a model to simulate how the feature size of the textured ZnO:Al influence the haze and short-circuit current. Moreover we introduce the anneal effect on a-Si:H thin film solar cell.
ISSN:2378-8593
DOI:10.1109/ISNE.2010.5669201