Evaluation the layout dependences on strained 22nm NMOSFETs

Evaluation the layout dependences on strained 22nm NMOSFETs

For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.

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Bibliographische Detailangaben
Hauptverfasser: Jieyu Qin, Gang Du, Ruqi Han, Xiaoyan Liu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Layout
Logic gates
MOSFETs
Performance evaluation
Strain
Stress
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Beschreibung
Zusammenfassung:For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.
DOI:10.1109/ICSICT.2010.5667813