A threshold voltage model for the surrounding-gate MOSFETs
The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simu...
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| creator | Guanghui Mei Guangxi Hu Peicheng Li Jinglun Gu Ran Liu Tingao Tang |
| description | The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The V th model can be used for the integrated circuit designers. |
| doi_str_mv | 10.1109/ICSICT.2010.5667783 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5667783</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5667783</ieee_id><sourcerecordid>5667783</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-cb7012d94c9ff7d4bde08117f2ccf6d0ece6ac57e943e7d2fc6b44ff04beafc33</originalsourceid><addsrcrecordid>eNpVj8tqwzAURBVKISX1F2SjH3Cql3Wt7oLpw5CSRbwPsnTluDhxkZxC_76GZtPZDHMGBoaQNWcbzpl5qqtDXTUbwWZQaA1QygXJDJRcCaUKMKW6-5cBliRL6ZPNKgQIIx_I85ZOp4jpNA6efo_DZDuk59HjQMMY5w5pusY4Xi--v3R5ZyekH_vD60uTHsl9sEPC7OYr0sy4es93-7e62u7y3rApdy0wLrxRzoQAXrUeWck5BOFc0J6hQ21dAWiURPAiON0qFQJTLdrgpFyR9d9sj4jHr9ifbfw53g7LX-gMSnI</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A threshold voltage model for the surrounding-gate MOSFETs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Guanghui Mei ; Guangxi Hu ; Peicheng Li ; Jinglun Gu ; Ran Liu ; Tingao Tang</creator><creatorcontrib>Guanghui Mei ; Guangxi Hu ; Peicheng Li ; Jinglun Gu ; Ran Liu ; Tingao Tang</creatorcontrib><description>The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The V th model can be used for the integrated circuit designers.</description><identifier>ISBN: 9781424457977</identifier><identifier>ISBN: 1424457971</identifier><identifier>EISBN: 9781424457984</identifier><identifier>EISBN: 142445798X</identifier><identifier>EISBN: 1424458005</identifier><identifier>EISBN: 9781424458004</identifier><identifier>DOI: 10.1109/ICSICT.2010.5667783</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Electric potential ; Integrated circuit modeling ; MOSFETs ; Numerical models ; Threshold voltage</subject><ispartof>2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.1919-1921</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5667783$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5667783$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Guanghui Mei</creatorcontrib><creatorcontrib>Guangxi Hu</creatorcontrib><creatorcontrib>Peicheng Li</creatorcontrib><creatorcontrib>Jinglun Gu</creatorcontrib><creatorcontrib>Ran Liu</creatorcontrib><creatorcontrib>Tingao Tang</creatorcontrib><title>A threshold voltage model for the surrounding-gate MOSFETs</title><title>2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology</title><addtitle>ICSICT</addtitle><description>The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The V th model can be used for the integrated circuit designers.</description><subject>Analytical models</subject><subject>Electric potential</subject><subject>Integrated circuit modeling</subject><subject>MOSFETs</subject><subject>Numerical models</subject><subject>Threshold voltage</subject><isbn>9781424457977</isbn><isbn>1424457971</isbn><isbn>9781424457984</isbn><isbn>142445798X</isbn><isbn>1424458005</isbn><isbn>9781424458004</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVj8tqwzAURBVKISX1F2SjH3Cql3Wt7oLpw5CSRbwPsnTluDhxkZxC_76GZtPZDHMGBoaQNWcbzpl5qqtDXTUbwWZQaA1QygXJDJRcCaUKMKW6-5cBliRL6ZPNKgQIIx_I85ZOp4jpNA6efo_DZDuk59HjQMMY5w5pusY4Xi--v3R5ZyekH_vD60uTHsl9sEPC7OYr0sy4es93-7e62u7y3rApdy0wLrxRzoQAXrUeWck5BOFc0J6hQ21dAWiURPAiON0qFQJTLdrgpFyR9d9sj4jHr9ifbfw53g7LX-gMSnI</recordid><startdate>201011</startdate><enddate>201011</enddate><creator>Guanghui Mei</creator><creator>Guangxi Hu</creator><creator>Peicheng Li</creator><creator>Jinglun Gu</creator><creator>Ran Liu</creator><creator>Tingao Tang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201011</creationdate><title>A threshold voltage model for the surrounding-gate MOSFETs</title><author>Guanghui Mei ; Guangxi Hu ; Peicheng Li ; Jinglun Gu ; Ran Liu ; Tingao Tang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-cb7012d94c9ff7d4bde08117f2ccf6d0ece6ac57e943e7d2fc6b44ff04beafc33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Analytical models</topic><topic>Electric potential</topic><topic>Integrated circuit modeling</topic><topic>MOSFETs</topic><topic>Numerical models</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Guanghui Mei</creatorcontrib><creatorcontrib>Guangxi Hu</creatorcontrib><creatorcontrib>Peicheng Li</creatorcontrib><creatorcontrib>Jinglun Gu</creatorcontrib><creatorcontrib>Ran Liu</creatorcontrib><creatorcontrib>Tingao Tang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guanghui Mei</au><au>Guangxi Hu</au><au>Peicheng Li</au><au>Jinglun Gu</au><au>Ran Liu</au><au>Tingao Tang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A threshold voltage model for the surrounding-gate MOSFETs</atitle><btitle>2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology</btitle><stitle>ICSICT</stitle><date>2010-11</date><risdate>2010</risdate><spage>1919</spage><epage>1921</epage><pages>1919-1921</pages><isbn>9781424457977</isbn><isbn>1424457971</isbn><eisbn>9781424457984</eisbn><eisbn>142445798X</eisbn><eisbn>1424458005</eisbn><eisbn>9781424458004</eisbn><abstract>The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The V th model can be used for the integrated circuit designers.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2010.5667783</doi><tpages>3</tpages></addata></record> |
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| subjects | Analytical models Electric potential Integrated circuit modeling MOSFETs Numerical models Threshold voltage |
| title | A threshold voltage model for the surrounding-gate MOSFETs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T01%3A32%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20threshold%20voltage%20model%20for%20the%20surrounding-gate%20MOSFETs&rft.btitle=2010%2010th%20IEEE%20International%20Conference%20on%20Solid-State%20and%20Integrated%20Circuit%20Technology&rft.au=Guanghui%20Mei&rft.date=2010-11&rft.spage=1919&rft.epage=1921&rft.pages=1919-1921&rft.isbn=9781424457977&rft.isbn_list=1424457971&rft_id=info:doi/10.1109/ICSICT.2010.5667783&rft_dat=%3Cieee_6IE%3E5667783%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424457984&rft.eisbn_list=142445798X&rft.eisbn_list=1424458005&rft.eisbn_list=9781424458004&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5667783&rfr_iscdi=true |