A threshold voltage model for the surrounding-gate MOSFETs

A threshold voltage model for the surrounding-gate MOSFETs

The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Guanghui Mei, Guangxi Hu, Peicheng Li, Jinglun Gu, Ran Liu, Tingao Tang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Electric potential
Integrated circuit modeling
MOSFETs
Numerical models
Threshold voltage
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Beschreibung
Zusammenfassung:The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V th ) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The V th model can be used for the integrated circuit designers.
DOI:10.1109/ICSICT.2010.5667783