The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode

The effect of isotropic and anisotropic scattering within the drain region of diode with ballistic channel is investigated using the semiclassical Monte Carlo simulation, and the results are discussed. The results show that the isotropic scattering can severely degrade the steady-state current, the electrons mean velocity, and increase the electrons concentration in channel because some hot electrons can back into the channel from drain, and even return to the source. On the contrary, anisotropic scattering can suppresses the backward flow of hot electrons. We conclude that the isotropic scattering in the drain region seriously influences the carrier transport relative to anisotropic scattering.