Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from the experimental data.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3257-3261
Hauptverfasser: Kuboyama, Satoshi, Maru, Akifumu, Ikeda, Naomi, Hirao, Toshio, Tamura, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
Damage
Degradation
Heavy ions
Ions
microdose
MOSFETs
Nuclear power generation
power MOSFETs
Single event upset
single-event effects
Trenches
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Beschreibung
Zusammenfassung:It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from the experimental data.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2081686