Investigation and Analysis of LM124 Bipolar Linear Circuitry Response Phenomenon in Pulsed X-Ray Environment

Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon...

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Veröffentlicht in:	IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3392-3399
Hauptverfasser:	Roche, N J, Dusseau, L, Vaille, J, Mekki, J, Velo, Y G, Perez, S, Boch, J, Saigne, F, Marec, R, Calvel, P, Bezerra, F, Auriel, G, Azais, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog integrated circuits Bias Bipolar analog integrated circuits Computer simulation Correlation Electronics Engineering Sciences Equivalence Integrated circuit modeling ionizing dose Mathematical models Radiation effects Single event transient transient propagation Transient response X-rays
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Beschreibung
Zusammenfassung:	Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon a previously developed ASET simulation tool, is used to model the ATREE phenomena. A semiempirical physical model is used to perform the correlation between the duration of the parasitic pulse signal induced in the LM124 and an equivalent value of the high dose-rate X-ray pulse level.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2010.2089063