Monte Carlo device simulation on PARAM

Monte Carlo device simulation on PARAM

Self-consistent ensemble Monte Carlo technique has been employed to obtain the velocity profiles for the n/sup +/-n-n/sup +/ structure. The simulator solves the Poisson equation at regular time intervals to update the electric field distribution and uses cloud-in-cell method for charge assignment. T...

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Bibliographische Detailangaben
Hauptverfasser: Harkar, A., Shaligram, A.D., Ghaisas, S.V., Sundararajan, V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Cathodes
Computational modeling
Doping
History
Monte Carlo methods
Parallel processing
Poisson equations
Semiconductor devices
Solid modeling
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Beschreibung
Zusammenfassung:Self-consistent ensemble Monte Carlo technique has been employed to obtain the velocity profiles for the n/sup +/-n-n/sup +/ structure. The simulator solves the Poisson equation at regular time intervals to update the electric field distribution and uses cloud-in-cell method for charge assignment. This report presents the parallel implementation of the device simulation on 9000/AA platform of CDAC. A linear speedup has been realised on an 8-node machine.
DOI:10.1109/HIPC.1996.565792