Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

This paper, for the first time, shows that the work-function variation (WFV) in emerging metal-gate devices results in significant fluctuation in the gate-oxide electric field, and hence fluctuation in bias temperature instability (BTI) characteristics (both NBTI and PBTI). We modify the existing NB...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rasouli, S H, Endo, K, Banerjee, K
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Degradation Electric fields Fluctuations Logic gates MOS devices Threshold voltage
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