Switched LNAs using GaAs MMIC based RF MEMS switches

Switched LNAs using GaAs MMIC based RF MEMS switches

In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuati...

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Bibliographische Detailangaben
Hauptverfasser: Malmqvist, R, Samuelsson, C, Smith, D, Vaha-Heikkila, T, Baggen, R
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Low noise amplifiers
Micromechanical devices
Microswitches
MMIC
MMICs
Radio frequency
radio frequency microelectromechanical systems
switches
Switching circuits
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Beschreibung
Zusammenfassung:In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2010.5650706