Intervalley scattering and field screening in germanium/silicon-germanium quantum wells

The scattering time of electrons from the direct Γ to the indirect L valley in the conduction band of germanium/silicon-germanium quantum wells is measured to be ~250 fs. Carrier field screening is also observed and modeled.

Bibliographische Detailangaben

Hauptverfasser:	Taşyürek, Emel, Claussen, Stephanie A, Roth, Jonathan E, Miller, David A B
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Bleaching carrier dynamics Excitons field screening germanium intervalley scattering Laser excitation Measurement by laser beam optical interconnects optoelectronics Scattering Silicon germanium
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!