Intervalley scattering and field screening in germanium/silicon-germanium quantum wells

Intervalley scattering and field screening in germanium/silicon-germanium quantum wells

The scattering time of electrons from the direct Γ to the indirect L valley in the conduction band of germanium/silicon-germanium quantum wells is measured to be ~250 fs. Carrier field screening is also observed and modeled.

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Bibliographische Detailangaben
Hauptverfasser: Taşyürek, Emel, Claussen, Stephanie A, Roth, Jonathan E, Miller, David A B
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Bleaching
carrier dynamics
Excitons
field screening
germanium
intervalley scattering
Laser excitation
Measurement by laser beam
optical interconnects
optoelectronics
Scattering
Silicon germanium
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Beschreibung
Zusammenfassung:The scattering time of electrons from the direct Γ to the indirect L valley in the conduction band of germanium/silicon-germanium quantum wells is measured to be ~250 fs. Carrier field screening is also observed and modeled.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2010.5643355