Catastrophic-optical-damage-free InGaN laser diodes with epitaxially-formed window structure

Catastrophic-optical-damage-free InGaN laser diodes with epitaxially-formed window structure

High power over 2W free from catastrophic-optical-damage is achieved in InGaN-based lasers with epitaxially-formed window structure. Epitaxial growth over a recess reduces the In composition which eliminates the undesired optical absorption only at the facet.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kawaguchi, M, Kasugai, H, Samonji, K, Hagino, H, Orita, K, Yamanaka, K, Yuri, M, Takigawa, S
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Cavity resonators
Diode lasers
Epitaxial growth
MOCVD
Photonic band gap
Power generation
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:High power over 2W free from catastrophic-optical-damage is achieved in InGaN-based lasers with epitaxially-formed window structure. Epitaxial growth over a recess reduces the In composition which eliminates the undesired optical absorption only at the facet.
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2010.5642767