MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates

MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates

In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.

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Bibliographische Detailangaben
Hauptverfasser: Liebich, S., Sweeney, S.J., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Crystals
Lattices
Semiconductor lasers
Silicon
Substrates
Waveguide lasers
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Beschreibung
Zusammenfassung:In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2010.5642712