Electrical characterization of annular through silicon vias for a reconfigurable wafer-sized circuit board

This paper presents the electrical characterization of annular TSV technology for full wafer applications. A possible utilization of this technology is the WaferBoard™, a reconfigurable circuit board for rapid system prototyping. Electrical resistance and capacitance of a single 2-4μm thick annular TSV with a diameter of 110μm and a height of 350μm are measured to be about 10mΩ and 0.27pF, respectively. TSV yield of 98% is reached over the wafer. Results also show electrical failure of some TSVs due to poor via filling.