A comparison of gettering in single- and multicrystalline silicon for solar cells
The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of getteri...
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| creator | Sopori, B.L. Jastrzebski, L. Tan, T. |
| description | The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells. |
| doi_str_mv | 10.1109/PVSC.1996.564206 |
| format | Conference Proceeding |
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These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.</description><subject>Aluminum</subject><subject>CRYSTALLIZATION</subject><subject>FABRICATION</subject><subject>GETTERING</subject><subject>HEAT TREATMENTS</subject><subject>Hydrogen</subject><subject>IMPURITIES</subject><subject>Photovoltaic cells</subject><subject>Semiconductor device modeling</subject><subject>Silicon</subject><subject>SILICON SOLAR CELLS</subject><subject>SOLAR ENERGY</subject><subject>Temperature distribution</subject><subject>Ultrasonic imaging</subject><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1LAzEYhAMq2Fbv4in-gK1vNumbzbEsfkFBxY_rko1vaiTdLZt46L83UE9zmGeGYRi7ErAUAszty-dbuxTG4HKFqgY8YXPQDUgpENUpm4FAqBqpxTmbp_QDUINEMWOva-7G3d5OIY0DHz3fUs40hWHLw8BT0UgVt8MX3_3GHNx0SNnGGAYqZgyuhPw48TRGO3FHMaYLduZtTHT5rwv2cX_33j5Wm-eHp3a9qYIEzJVSZKyRjS_7EFd9Y6123qJuUEus0aPubd1rJFgJBYI8GOydN4IaKo5csJtj75hy6JILmdx32TOQy50SKKQqzPWRCUTU7aews9OhOz4k_wCuk1pN</recordid><startdate>19960101</startdate><enddate>19960101</enddate><creator>Sopori, B.L.</creator><creator>Jastrzebski, L.</creator><creator>Tan, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>19960101</creationdate><title>A comparison of gettering in single- and multicrystalline silicon for solar cells</title><author>Sopori, B.L. ; Jastrzebski, L. ; Tan, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i306t-44e9a938f664665b8aa7cfa678673626f67ba2b76e051401ef096bcf91e8eba23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Aluminum</topic><topic>CRYSTALLIZATION</topic><topic>FABRICATION</topic><topic>GETTERING</topic><topic>HEAT TREATMENTS</topic><topic>Hydrogen</topic><topic>IMPURITIES</topic><topic>Photovoltaic cells</topic><topic>Semiconductor device modeling</topic><topic>Silicon</topic><topic>SILICON SOLAR CELLS</topic><topic>SOLAR ENERGY</topic><topic>Temperature distribution</topic><topic>Ultrasonic imaging</topic><toplevel>online_resources</toplevel><creatorcontrib>Sopori, B.L.</creatorcontrib><creatorcontrib>Jastrzebski, L.</creatorcontrib><creatorcontrib>Tan, T.</creatorcontrib><creatorcontrib>National Renewable Energy Lab., Golden, CO (United States)</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sopori, B.L.</au><au>Jastrzebski, L.</au><au>Tan, T.</au><aucorp>National Renewable Energy Lab., Golden, CO (United States)</aucorp><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A comparison of gettering in single- and multicrystalline silicon for solar cells</atitle><btitle>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996</btitle><stitle>PVSC</stitle><date>1996-01-01</date><risdate>1996</risdate><spage>625</spage><epage>628</epage><pages>625-628</pages><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><abstract>The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/PVSC.1996.564206</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.625-628 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_564206 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum CRYSTALLIZATION FABRICATION GETTERING HEAT TREATMENTS Hydrogen IMPURITIES Photovoltaic cells Semiconductor device modeling Silicon SILICON SOLAR CELLS SOLAR ENERGY Temperature distribution Ultrasonic imaging |
| title | A comparison of gettering in single- and multicrystalline silicon for solar cells |
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