A comparison of gettering in single- and multicrystalline silicon for solar cells

A comparison of gettering in single- and multicrystalline silicon for solar cells

The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of getteri...

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Bibliographische Detailangaben
Hauptverfasser: Sopori, B.L., Jastrzebski, L., Tan, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum
CRYSTALLIZATION
FABRICATION
GETTERING
HEAT TREATMENTS
Hydrogen
IMPURITIES
Photovoltaic cells
Semiconductor device modeling
Silicon
SILICON SOLAR CELLS
SOLAR ENERGY
Temperature distribution
Ultrasonic imaging
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Beschreibung
Zusammenfassung:The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.564206