Single step rapid thermal diffusion for selective emitter formation and selective oxidation

Single step rapid thermal diffusion for selective emitter formation and selective oxidation

A novel method of forming selective emitters for Si solar cells is presented. Using spectral selection of the light used in rapid thermal processing (RTP), diffusion profiles can be tailored to variations desired in sheet resistance of emitters. Sheet resistance topography, secondary ion mass spectr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schindler, R., Breymesser, A., Lautenschlager, H., Marckmann, C., Noel, S., Schubert, U.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Conductivity
Diffusion processes
Furnaces
Performance analysis
Probes
Shape
Surface topography
Tail
Temperature dependence
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Beschreibung
Zusammenfassung:A novel method of forming selective emitters for Si solar cells is presented. Using spectral selection of the light used in rapid thermal processing (RTP), diffusion profiles can be tailored to variations desired in sheet resistance of emitters. Sheet resistance topography, secondary ion mass spectroscopy, reoxidation and minority carrier lifetime are discussed.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.564055