Radiation-resistance of InGaP solar cells

Radiation-resistance of InGaP solar cells

Irradiation effects of 1-MeV electrons in In/sub 0.5/Ga/sub 0.5/P (hereafter written as InGaP) space solar cells fabricated on GaAs substrates have been examined in comparison with those of GaAs and InP cells. Superior radiation-resistance of InGaP cells compared to GaAs cells has been found in term...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yamaguchi, M., Vargas-Aburto, C., Taylor, S.J., Ming-Ju Yang, Takamoto, T., Ikeda, E., Kurita, H., Ohmori, M., Uribe, R.M., Brinker, D., Scheiman, D.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Chemical vapor deposition
Electron beams
Gallium arsenide
Indium phosphide
Inorganic materials
MOCVD
Photovoltaic cells
Protons
Wavelength measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Irradiation effects of 1-MeV electrons in In/sub 0.5/Ga/sub 0.5/P (hereafter written as InGaP) space solar cells fabricated on GaAs substrates have been examined in comparison with those of GaAs and InP cells. Superior radiation-resistance of InGaP cells compared to GaAs cells has been found in terms of solar cell properties and minority-carrier diffusion length. Moreover, minority-carrier injection-enhanced annealing of radiation-induced defects in InP-related materials has also been observed.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.563972