On-sun concentrator performance of GaInP/GaAs tandem cells

The GaInP/GaAs concentrator device has been adapted for and tested in a prototype "real-world" concentrator power system. The device achieved an on-sun efficiency of 27%/spl plusmn/1% in the range of approximately 80-400 suns with device operating temperatures of 32/spl deg/C to 50/spl deg...

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Hauptverfasser:	Friedman, D.J., Kurtz, S.R., Sinha, K., McMahon, W.E., Kramer, C.M., Olson, J.M., Lasich, J.B., Cleeve, A.X., Connaughton, I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CASCADE SOLAR CELLS CONCENTRATOR SOLAR CELLS Conductivity Cooling Electric conductivity Electric contacts Electric power systems Electrical resistance measurement Electroplating Equipment testing Fingers Fluctuations Fluid flow measurement Gallium arsenide GALLIUM ARSENIDES GALLIUM PHOSPHIDES INDIUM PHOSPHIDES Metallization Metallizing PERFORMANCE TESTING Photoconductivity Photoresists Q1 Semiconducting gallium arsenide Semiconducting gallium compounds Solar concentrators SOLAR ENERGY Temperature
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Beschreibung
Zusammenfassung:	The GaInP/GaAs concentrator device has been adapted for and tested in a prototype "real-world" concentrator power system. The device achieved an on-sun efficiency of 27%/spl plusmn/1% in the range of approximately 80-400 suns with device operating temperatures of 32/spl deg/C to 50/spl deg/C. We discuss ways of further improving this performance for future devices.
ISSN:	0160-8371
DOI:	10.1109/PVSC.1996.563949