Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping
Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is pr...
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| creator | Lutsenko, E V Pavlovskii, V N Danilchyk, A V Rzheutski, M V Vainilovich, A G Zubialevich, V Z Muravitskaya, A V Yablonskii, G P |
| description | Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media. |
| doi_str_mv | 10.1109/CAOL.2010.5634204 |
| format | Conference Proceeding |
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| ispartof | 2010 International Conference on Advanced Optoelectronics and Lasers, 2010, p.219-221 |
| issn | 2160-1518 2160-1534 |
| language | eng |
| recordid | cdi_ieee_primary_5634204 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Laser excitation Pump lasers |
| title | Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping |
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