Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping

Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is pr...

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Hauptverfasser: Lutsenko, E V, Pavlovskii, V N, Danilchyk, A V, Rzheutski, M V, Vainilovich, A G, Zubialevich, V Z, Muravitskaya, A V, Yablonskii, G P
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.
ISSN:2160-1518
2160-1534
DOI:10.1109/CAOL.2010.5634204