AlGaN/GaN two-stage power amplifier of X-band

AlGaN/GaN two-stage power amplifier of X-band

The results of development of "quasi-monolithic" two-stage power amplifier within 9-10.5 GHz bandwidth with output power in the saturation mode more than 4.0W at gain coefficient of 12.5-13 dB are presented. The experimental characteristics of designed amplifier are given.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Glazunov, V, Guljaev, V, Zykova, G, Mjakichev, J, Chaly, V
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Electronic mail
Gallium nitride
Logic gates
Power amplifiers
Power generation
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The results of development of "quasi-monolithic" two-stage power amplifier within 9-10.5 GHz bandwidth with output power in the saturation mode more than 4.0W at gain coefficient of 12.5-13 dB are presented. The experimental characteristics of designed amplifier are given.
DOI:10.1109/CRMICO.2010.5632934