Simulation of transfer processes in solid-state heterojunction structures with space-charge waves

On the basis of a method of statistical modeling investigations of basic mechanisms of dispersion in semiconductor heterostructures and basic characteristics of a physical process of carrier transfer in a mode with occurrence of plasma waves are carried out. Novelty consists in statistical modeling and self-co-ordinated solution of Schroedinger equation. It all allows revealing of basic physical mechanisms, determining the increase of propagation velocity of plasma waves, and defining of requirements of a choice of electrophysical parameters of heterostructures for production of oscillations in the millimetric range.