Influence of aperiodicity of nanoscale structures on the resistance

Nano-scale devices are considered as an aperiodic structure based on a crystalline material. For the proposed approach the approach for quantum conductivity of materials is grounded, when the change in resistance of semiconductor working layers is determined by the concentration of free carriers gen...

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Bibliographische Detailangaben
Hauptverfasser: Mazinov, A S, Bakhov, V A, Karavainikov, A V
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:Nano-scale devices are considered as an aperiodic structure based on a crystalline material. For the proposed approach the approach for quantum conductivity of materials is grounded, when the change in resistance of semiconductor working layers is determined by the concentration of free carriers generated by periodic and aperiodic power budget.
DOI:10.1109/CRMICO.2010.5632863