Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers
MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved.
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| creator | Pligovka, A N Luferov, A N Nosik, R F Mozalev, A M |
| description | MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved. |
| doi_str_mv | 10.1109/CRMICO.2010.5632734 |
| format | Conference Proceeding |
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| ispartof | 2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010, p.880-881 |
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| language | eng |
| recordid | cdi_ieee_primary_5632734 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Capacitors Dielectric losses Electronic mail Leakage current Materials |
| title | Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers |
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