Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers

Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers

MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved.

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Bibliographische Detailangaben
Hauptverfasser: Pligovka, A N, Luferov, A N, Nosik, R F, Mozalev, A M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Capacitors
Dielectric losses
Electronic mail
Leakage current
Materials
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Beschreibung
Zusammenfassung:MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved.
DOI:10.1109/CRMICO.2010.5632734