Standard technologies for microvawe semiconductor electronics based on III-nitrides

Standard technologies for microvawe semiconductor electronics based on III-nitrides

The 0.8 mkm AlGaN based process is realized to create power transistors suitable for design of microwave amplifiers with working frequencies up to C-band. Newly developed 0.5 mkm- process is expected to extend technology applicability towards X-band RF-devices.

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Bibliographische Detailangaben
Hauptverfasser: Krasovitskiy, D M, Katsavets, N I, Kokin, S V, Filaretov, A G, Chaliy, V P
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Foundries
Gallium nitride
Logic gates
Process control
Silicon carbide
Transistors
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Beschreibung
Zusammenfassung:The 0.8 mkm AlGaN based process is realized to create power transistors suitable for design of microwave amplifiers with working frequencies up to C-band. Newly developed 0.5 mkm- process is expected to extend technology applicability towards X-band RF-devices.
DOI:10.1109/CRMICO.2010.5632544