Metallization on the basis of binary and ternary alloys for submicron elements of MEMS RF-microswitches formation

Metallization on the basis of binary and ternary alloys for submicron elements of MEMS RF-microswitches formation

Features of structure of aluminum metallization on the basis of binary and ternary alloys for submicron elements of MEMS formation are considered. It is shown, that use of ternary alloys Al+Si+Cu and Al+Si+Ho at temperature of a substrate 250-280°C leads to formation of the most fine-grained films o...

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Bibliographische Detailangaben
Hauptverfasser: A.G., Chernykh, A.S., Tymoshchyk
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum
Metallization
Micromechanical devices
Microswitches
Radio frequency
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Zusammenfassung:Features of structure of aluminum metallization on the basis of binary and ternary alloys for submicron elements of MEMS formation are considered. It is shown, that use of ternary alloys Al+Si+Cu and Al+Si+Ho at temperature of a substrate 250-280°C leads to formation of the most fine-grained films of the metallization giving reproducible profiles of anodizing at formation of submicron elements of MEMS RF-microswitches.
DOI:10.1109/CRMICO.2010.5632447