High-sensitivity 10Gbps Ge photoreceiver operating at λ ∼1.55 µm

High-sensitivity 10Gbps Ge photoreceiver operating at λ ∼1.55 µm

We present a vertical-illumination-type 100% Ge-on-Si photodetector with the quantum efficiencies up to of 75.2% at λ~1.55 μm and 96.4% at λ~1.31 μm. The 10 Gbps photoreceiver with a fabricated 90 μm-diameter Ge photodetector exhibits the sensitivity of -18.5 dBm at a BER of 10 -12 for λ~1.55 μm, wh...

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Bibliographische Detailangaben
Hauptverfasser: Jiho Joo, Sanghoon Kim, In Gyoo Kim, Ki-Seok Jang, Gyungock Kim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Bit error rate
Current measurement
Photodetectors
Semiconductor device measurement
Sensitivity
Silicon
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Beschreibung
Zusammenfassung:We present a vertical-illumination-type 100% Ge-on-Si photodetector with the quantum efficiencies up to of 75.2% at λ~1.55 μm and 96.4% at λ~1.31 μm. The 10 Gbps photoreceiver with a fabricated 90 μm-diameter Ge photodetector exhibits the sensitivity of -18.5 dBm at a BER of 10 -12 for λ~1.55 μm, which is comparable to that of III-V counterpart.
ISSN:1550-381X
DOI:10.1109/ECOC.2010.5621182