New Thermocouple-Based Microwave/Millimeter-Wave Power Sensor MMIC Techniques in GaAs

We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism fo...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2011-02, Vol.59 (2), p.338-344
Hauptverfasser: Scott, Jonathan B, Low, T S, Cochran, Steve, Keppeler, Ben, Staroba, John, Yeats, Bob
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Sprache:eng
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Zusammenfassung:We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for in-built detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2010.2087346