New Thermocouple-Based Microwave/Millimeter-Wave Power Sensor MMIC Techniques in GaAs
We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism fo...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2011-02, Vol.59 (2), p.338-344 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for in-built detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale. |
---|---|
ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2010.2087346 |