Mixed-Signal Circuits Using 250nm InP HBT Technology Integrated with 90nm CMOS

Mixed-Signal Circuits Using 250nm InP HBT Technology Integrated with 90nm CMOS

Digital Analog converters using InP HBTs and 90nm CMOS have been designed using the novel HRL integration process developed under the DARPA COSMOS program. These circuits demonstrate that this process is capable of providing a compelling alternative to traditional Si/SiGe BiCMOS implementations for...

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Bibliographische Detailangaben
Hauptverfasser: Elliott, K R, Baringer, C, Li, J C, Royter, Y, Patterson, P R, Hussain, T
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS integrated circuits
Heterojunction bipolar transistors
Indium phosphide
Libraries
Semiconductor device modeling
Silicon
Solid modeling
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Beschreibung
Zusammenfassung:Digital Analog converters using InP HBTs and 90nm CMOS have been designed using the novel HRL integration process developed under the DARPA COSMOS program. These circuits demonstrate that this process is capable of providing a compelling alternative to traditional Si/SiGe BiCMOS implementations for producing highly integrated state-of-the-art mixed signal and digitally-assisted analog circuits.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2010.5619668