Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous i...

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Bibliographische Detailangaben
Hauptverfasser: Gutierrez-Aitken, Augusto, Chang-Chien, Patty, Scott, Dennis, Hennig, Kelly, Kaneshiro, Eric, Nam, Peter, Cohen, Neir, Ching, Daniel, Khanh Thai, Oyama, Bert, Zhou, Joe, Geiger, Craig, Poust, Ben, Parlee, Matthew, Sandhu, Randy, Wen Phan, Oki, Aaron, Kagiwada, Reynold
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS integrated circuits
Compounds
Differential amplifiers
Heterojunction bipolar transistors
Indium phosphide
Resistance
Silicon
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Beschreibung
Zusammenfassung:Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in dynamic range and bandwidth of high performance mixed signal circuits.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2010.5619667