A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module

We have demonstrated a 0.1-1.8 GHz, 100 W GaN HEMT power amplifier module with 11 dB gain, 94-142 W CW output power and 40.6-74.0% drain efficiency over the band. The power amplifier module uses broadband low loss coaxial baluns to combine four 30 W broadband lossy matched GaN HEMT PAs on a 2 × 2 inch compact PCB. The individual PAs are fully matched to 50 Ohms and obtains 23.6-30.9 W with 44.5-63.7 % drain efficiency over the band. The packaged amplifiers contain a GaN on SiC device operating at 50 V drain voltage with a GaAs integrated passive matching circuitry. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.