A Metamorphic HEMT S-MMIC Amplifier with 16.1 dB Gain at 460 GHz

A Metamorphic HEMT S-MMIC Amplifier with 16.1 dB Gain at 460 GHz

In this paper, we present a four-stage submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/I...

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Hauptverfasser: Tessmann, A, Leuther, A, Loesch, R, Seelmann-Eggebert, M, Massler, H
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gain
Indium phosphide
Logic gates
mHEMTs
Microwave amplifiers
Scattering parameters
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Beschreibung
Zusammenfassung:In this paper, we present a four-stage submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and demonstrates a peak gain of 16.1 dB at 460 GHz and a small-signal gain of more than 13 dB in the bandwidth from 433 to 465 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with a very compact design resulted in a die size of only 0.37 × 0.63 mm 2 .
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2010.5619608