Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers
We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC64...
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| creator | Chen, Dakai Pellish, Jonathan Phan, Anthony Hak Kim Burns, Sam Albarian, Rafi Holcombe, Bruce Little, Bradley Salzman, James Marshall, Paul LaBel, Kenneth |
| description | We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth |
| doi_str_mv | 10.1109/REDW.2010.5619511 |
| format | Conference Proceeding |
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We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth <; 7.4 MeV-cm 2 /mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LETth <; 4.4 MeV-cm 2 /mg at 200 MHz; the LETth decreases with increasing frequency. The SET cross-sections increase with increasing operating frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz erase several signal cycles. We also found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.</description><identifier>ISSN: 2154-0519</identifier><identifier>ISBN: 9781424484058</identifier><identifier>ISBN: 1424484057</identifier><identifier>EISBN: 9781424484034</identifier><identifier>EISBN: 9781424484041</identifier><identifier>EISBN: 1424484049</identifier><identifier>EISBN: 1424484030</identifier><identifier>DOI: 10.1109/REDW.2010.5619511</identifier><language>eng</language><publisher>IEEE</publisher><subject>BiCMOS integrated circuits ; CMOS integrated circuits ; Heterojunction bipolar transistors ; Instruments ; Protons ; Radiation effects ; Silicon germanium</subject><ispartof>2010 IEEE Radiation Effects Data Workshop, 2010, p.5-5</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5619511$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5619511$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Dakai</creatorcontrib><creatorcontrib>Pellish, Jonathan</creatorcontrib><creatorcontrib>Phan, Anthony</creatorcontrib><creatorcontrib>Hak Kim</creatorcontrib><creatorcontrib>Burns, Sam</creatorcontrib><creatorcontrib>Albarian, Rafi</creatorcontrib><creatorcontrib>Holcombe, Bruce</creatorcontrib><creatorcontrib>Little, Bradley</creatorcontrib><creatorcontrib>Salzman, James</creatorcontrib><creatorcontrib>Marshall, Paul</creatorcontrib><creatorcontrib>LaBel, Kenneth</creatorcontrib><title>Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers</title><title>2010 IEEE Radiation Effects Data Workshop</title><addtitle>REDW</addtitle><description>We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth <; 7.4 MeV-cm 2 /mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LETth <; 4.4 MeV-cm 2 /mg at 200 MHz; the LETth decreases with increasing frequency. The SET cross-sections increase with increasing operating frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz erase several signal cycles. We also found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.</description><subject>BiCMOS integrated circuits</subject><subject>CMOS integrated circuits</subject><subject>Heterojunction bipolar transistors</subject><subject>Instruments</subject><subject>Protons</subject><subject>Radiation effects</subject><subject>Silicon germanium</subject><issn>2154-0519</issn><isbn>9781424484058</isbn><isbn>1424484057</isbn><isbn>9781424484034</isbn><isbn>9781424484041</isbn><isbn>1424484049</isbn><isbn>1424484030</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUM1Kw0AYXFHBUvsA4mVfIHW__Um-PbaxbYRKpD94LGvyra40Tdh48e0N2otzGQZmBmYYuwMxBRD2YbN4fJ1KMUiTgjUAF2xiMwQttUYtlL78pw1esZEEoxNhwN6wSd9_igHaSGPkiO03rg7uK7Qn_kLRt7Fxp4p463neNg3FKrgj34YV8WK-4_OQP5dbXoT3D77tiGpedhR_44Nt1nTH4APF_pZde3fsaXLmMdsvF7u8SNbl6imfrZMASkHihTdVjVYqQ4g201QBOkNZJlARegUSvK50hpkkCyRTTFGnapgvqcI3NWb3f72BiA5dDI2L34fzMeoH4t5RzA</recordid><startdate>201007</startdate><enddate>201007</enddate><creator>Chen, Dakai</creator><creator>Pellish, Jonathan</creator><creator>Phan, Anthony</creator><creator>Hak Kim</creator><creator>Burns, Sam</creator><creator>Albarian, Rafi</creator><creator>Holcombe, Bruce</creator><creator>Little, Bradley</creator><creator>Salzman, James</creator><creator>Marshall, Paul</creator><creator>LaBel, Kenneth</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201007</creationdate><title>Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers</title><author>Chen, Dakai ; Pellish, Jonathan ; Phan, Anthony ; Hak Kim ; Burns, Sam ; Albarian, Rafi ; Holcombe, Bruce ; Little, Bradley ; Salzman, James ; Marshall, Paul ; LaBel, Kenneth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1331-f0f5cd89235e88974ec18a5e77083e8f3121f4c47872e91e268684632012ec8b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BiCMOS integrated circuits</topic><topic>CMOS integrated circuits</topic><topic>Heterojunction bipolar transistors</topic><topic>Instruments</topic><topic>Protons</topic><topic>Radiation effects</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Dakai</creatorcontrib><creatorcontrib>Pellish, Jonathan</creatorcontrib><creatorcontrib>Phan, Anthony</creatorcontrib><creatorcontrib>Hak Kim</creatorcontrib><creatorcontrib>Burns, Sam</creatorcontrib><creatorcontrib>Albarian, Rafi</creatorcontrib><creatorcontrib>Holcombe, Bruce</creatorcontrib><creatorcontrib>Little, Bradley</creatorcontrib><creatorcontrib>Salzman, James</creatorcontrib><creatorcontrib>Marshall, Paul</creatorcontrib><creatorcontrib>LaBel, Kenneth</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Dakai</au><au>Pellish, Jonathan</au><au>Phan, Anthony</au><au>Hak Kim</au><au>Burns, Sam</au><au>Albarian, Rafi</au><au>Holcombe, Bruce</au><au>Little, Bradley</au><au>Salzman, James</au><au>Marshall, Paul</au><au>LaBel, Kenneth</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers</atitle><btitle>2010 IEEE Radiation Effects Data Workshop</btitle><stitle>REDW</stitle><date>2010-07</date><risdate>2010</risdate><spage>5</spage><epage>5</epage><pages>5-5</pages><issn>2154-0519</issn><isbn>9781424484058</isbn><isbn>1424484057</isbn><eisbn>9781424484034</eisbn><eisbn>9781424484041</eisbn><eisbn>1424484049</eisbn><eisbn>1424484030</eisbn><abstract>We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth <; 7.4 MeV-cm 2 /mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LETth <; 4.4 MeV-cm 2 /mg at 200 MHz; the LETth decreases with increasing frequency. The SET cross-sections increase with increasing operating frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz erase several signal cycles. We also found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.</abstract><pub>IEEE</pub><doi>10.1109/REDW.2010.5619511</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2154-0519 |
| ispartof | 2010 IEEE Radiation Effects Data Workshop, 2010, p.5-5 |
| issn | 2154-0519 |
| language | eng |
| recordid | cdi_ieee_primary_5619511 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | BiCMOS integrated circuits CMOS integrated circuits Heterojunction bipolar transistors Instruments Protons Radiation effects Silicon germanium |
| title | Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers |
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