Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers

Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers

We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC64...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chen, Dakai, Pellish, Jonathan, Phan, Anthony, Hak Kim, Burns, Sam, Albarian, Rafi, Holcombe, Bruce, Little, Bradley, Salzman, James, Marshall, Paul, LaBel, Kenneth
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
CMOS integrated circuits
Heterojunction bipolar transistors
Instruments
Protons
Radiation effects
Silicon germanium
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth
ISSN:2154-0519
DOI:10.1109/REDW.2010.5619511