Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

In this paper, a systematic approach using HfO 2 , ZrO 2 and TiO 2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variati...

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Hauptverfasser: Wan Gee Kim, Min Gyu Sung, Sook Joo Kim, Ja Yong Kim, Ji Won Moon, Sung Joon Yoon, Jung Nam Kim, Byung Gu Gyun, Taeh Wan Kim, Chi Ho Kim, Jun Young Byun, Won Kim, Te One Youn, Jong Hee Yoo, Jang Won Oh, Ho Joung Kim, Moon Sig Joo, Jae Sung Roh, Sung Ki Park
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Electrodes
Materials
Resistance
Switches
Tin
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Beschreibung
Zusammenfassung:In this paper, a systematic approach using HfO 2 , ZrO 2 and TiO 2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a TiN/Ti/HfO 2 /TiN structure.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2010.5618197