A 45nm SOI compiled embedded DRAM with random cycle times down to 1.3ns

A family of embedded DRAMs which are fabricated in 45nm SOI technology is presented. The fast eDRAM has 64 b/BL and achieves a random cycle time of 1.3ns for V DD = 1.00V and typical process. The dense eDRAM has 128 b/BL and operates in multi-bank modes up to 1.67GHz for V DD = 1.0V and nominal process. The staggered - folded BL architecture with BL twisting over both the array and SAs is described as well as a novel wordline timer which generates a 75% duty cycle signal from a 50% duty cycle clock.