A 77 GHz power amplifier using transformer-based power combiner in 90 nm CMOS
A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has been realized in a general purpose 90 nm CMOS technology. In order to improve the output power and reduce the signal loss, a transformer and a short stub topology are employed respectively. The power amplifier ach...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has been realized in a general purpose 90 nm CMOS technology. In order to improve the output power and reduce the signal loss, a transformer and a short stub topology are employed respectively. The power amplifier achieves a saturated output power (P out,sat ) of +13.2 dBm and 1dB compressed output power (P out,1dB ) of +11.2 dBm with a peak power-added efficiency (PAE) of 10.4% while operated with a 1.2 V supply. |
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ISSN: | 0886-5930 2152-3630 |
DOI: | 10.1109/CICC.2010.5617399 |