CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets

CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets

CuInGaSe 2 /CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In 2 Se 3 , Ga 2 Se 3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality C...

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Bibliographische Detailangaben
Hauptverfasser: Romeo, N, Bosio, A, Mazzamuto, S, Menossi, D, Romeo, A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Copper
Indium tin oxide
Photovoltaic cells
Sputtering
Substrates
Zinc oxide
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Beschreibung
Zusammenfassung:CuInGaSe 2 /CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In 2 Se 3 , Ga 2 Se 3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe 2 film.
ISSN:0160-8371
DOI:10.1109/PVSC.2010.5617109