Amorphous GaN1−xAsx alloys for multi-junction solar cells

We propose GaN 1-x As x as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecula...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Broesler, R, Yu, K M, Novikov, S V, Liliental-Weber, Z, Haller, E E, Walukiewicz, W, Foxon, C T
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Gallium nitride Metals Photonic band gap Substrates
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