Amorphous GaN1−xAsx alloys for multi-junction solar cells

Amorphous GaN1−xAsx alloys for multi-junction solar cells

We propose GaN 1-x As x as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecula...

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Hauptverfasser: Broesler, R, Yu, K M, Novikov, S V, Liliental-Weber, Z, Haller, E E, Walukiewicz, W, Foxon, C T
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Gallium nitride
Metals
Photonic band gap
Substrates
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Beschreibung
Zusammenfassung:We propose GaN 1-x As x as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecular beam epitaxy (MBE) growth method results in amorphous films across much of the composition range (0.12
ISSN:0160-8371
DOI:10.1109/PVSC.2010.5617088