Localized doping using silicon ink technology for high efficiency solar cells

Localized doping using silicon ink technology for high efficiency solar cells

Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces...

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Bibliographische Detailangaben
Hauptverfasser: Alberi, K, Scardera, G, Moutinho, H, Reedy, R C, Romero, M J, Rogojina, E, Kelman, M, Poplavskyy, D, Young, D L, Lemmi, F, Antoniadis, H
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Ink
NANOSCIENCE AND NANOTECHNOLOGY
Photovoltaic cells
Scanning electron microscopy
Silicon
silicon ink technology
solar cells
SOLAR ENERGY
Surface treatment
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Beschreibung
Zusammenfassung:Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.
ISSN:0160-8371
DOI:10.1109/PVSC.2010.5614442