BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode programming. The dominant degradation is due to the...

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Veröffentlicht in:	IEEE electron device letters 2010-12, Vol.31 (12), p.1380-1382
Hauptverfasser:	Aoulaiche, Marc, Collaert, Nadine, Degraeve, Robin, Zhichao Lu, De Wachter, Bart, Groeseneken, Guido, Jurczak, Malgorzata, Altimime, Laith
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar junction transistor (BJT) Bipolar transistors bulk FinFET Current measurement cycling Degradation Design. Technologies. Operation analysis. Testing Devices Drains Durability Electronics Endurance Exact sciences and technology FinFETs floating-body cell (FBC) Integrated circuits Integrated circuits by function (including memories and processors) Interface states Junctions Leakage current Logic gates one-transistor random access memory (1T-RAM) Programming reliability Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Zusammenfassung:	In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode programming. The dominant degradation is due to the interface state generation by impact ionization used to write "1." This degradation leads to the gate-induced drain leakage current increase, which results in shifts of the read state "0" current.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2010.2079313