Design and fabrication of terahertz Extended Interaction Klystrons

The development of new terahertz power amplifiers at 0.67, 0.85 and 1.03 THz presents significant challenges in both design and fabrication. This paper describes the design challenges and methodology, an outline design of the new device and an analysis of fabrication techniques considered.

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Bibliographische Detailangaben
Hauptverfasser: Dobbs, R, Roitman, A, Horoyski, P, Hyttinen, M, Sweeney, D, Steer, B, Nguyen, K, Wright, E, Chernin, D, Burke, A, Calame, J, Levush, B, Barker, N S, Booske, J, Blank, M
Format: Tagungsbericht
Sprache:eng
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